Infineon N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS™ C7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 96,00
€ 3,20 tk (torus 30) (ilma käibemaksuta)
€ 117,12
€ 3,904 tk (torus 30) (koos käibemaksuga)
30
€ 96,00
€ 3,20 tk (torus 30) (ilma käibemaksuta)
€ 117,12
€ 3,904 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 30 - 30 | € 3,20 | € 96,00 |
| 60 - 120 | € 3,05 | € 91,50 |
| 150+ | € 2,75 | € 82,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS™ C7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products