Infineon HEXFET Dual P-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7316TRPBF
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Series
HEXFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Thailand
Toote üksikasjad
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 14,22
€ 0,711 tk (pakis 20) (ilma käibemaksuta)
€ 17,63
€ 0,882 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 14,22
€ 0,711 tk (pakis 20) (ilma käibemaksuta)
€ 17,63
€ 0,882 tk (pakis 20) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
20
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 20 - 80 | € 0,711 | € 14,22 |
| 100 - 180 | € 0,676 | € 13,52 |
| 200 - 480 | € 0,648 | € 12,96 |
| 500 - 980 | € 0,605 | € 12,10 |
| 1000+ | € 0,569 | € 11,38 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
4.9 A
Maximum Drain Source Voltage
30 V
Series
HEXFET
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Thailand
Toote üksikasjad
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products