Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
270 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
380 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
91 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
€ 8,60
€ 4,30 tk (pakis 2) (ilma käibemaksuta)
€ 10,66
€ 5,332 tk (pakis 2) (koos käibemaksuga)
2
€ 8,60
€ 4,30 tk (pakis 2) (ilma käibemaksuta)
€ 10,66
€ 5,332 tk (pakis 2) (koos käibemaksuga)
2
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 4,30 | € 8,60 |
10 - 18 | € 3,70 | € 7,40 |
20 - 38 | € 3,60 | € 7,20 |
40 - 98 | € 3,50 | € 7,00 |
100+ | € 3,20 | € 6,40 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
270 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
380 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
91 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
9.65mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
4.83mm