Tehnilised dokumendid
Spetsifikatsioonid:
Channel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Typical Gate Charge @ Vgs
48 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
8.77mm
P.O.A.
1
P.O.A.
1
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Tehnilised dokumendid
Spetsifikatsioonid:
Channel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Typical Gate Charge @ Vgs
48 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
8.77mm