IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
300 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
156 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Height
21.46mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 13,20
€ 13,20 tk (ilma käibemaksuta)
€ 16,10
€ 16,10 tk (koos käibemaksuga)
Standard
1
€ 13,20
€ 13,20 tk (ilma käibemaksuta)
€ 16,10
€ 16,10 tk (koos käibemaksuga)
Standard
1
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Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind |
|---|---|
| 1 - 9 | € 13,20 |
| 10+ | € 11,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
300 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
156 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Height
21.46mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products