MagnaChip MPMC100B120RH, 7DM-2 , N-Channel Series IGBT Module, 100 A max, 1200 V, Panel Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
694 W
Package Type
7DM-2
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
70kHz
Transistor Configuration
Series
Dimensions
94 x 48 x 22mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
Korea, Republic Of
Toote üksikasjad
IGBT Modules, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
694 W
Package Type
7DM-2
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Switching Speed
70kHz
Transistor Configuration
Series
Dimensions
94 x 48 x 22mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Päritoluriik
Korea, Republic Of
Toote üksikasjad
IGBT Modules, MagnaChip
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products