Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215

RS tootekood: 792-0891Bränd: NexperiaTootja Part nr.: BSS138P
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

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N-Channel MOSFET, 60V to 80V, Nexperia

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Lao andmed ajutiselt ei ole saadaval.

€ 5,40

€ 0,054 tk (rullis 100) (ilma käibemaksuta)

€ 6,59

€ 0,066 tk (rullis 100) (koos käibemaksuga)

Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215
Valige pakendi tüüp

€ 5,40

€ 0,054 tk (rullis 100) (ilma käibemaksuta)

€ 6,59

€ 0,066 tk (rullis 100) (koos käibemaksuga)

Nexperia N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 BSS138P,215
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
100 - 100€ 0,054€ 5,40
200 - 400€ 0,052€ 5,20
500 - 900€ 0,034€ 3,40
1000 - 1900€ 0,032€ 3,20
2000+€ 0,027€ 2,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more