Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 5,40
€ 0,054 tk (rullis 100) (ilma käibemaksuta)
€ 6,59
€ 0,066 tk (rullis 100) (koos käibemaksuga)
Standard
100
€ 5,40
€ 0,054 tk (rullis 100) (ilma käibemaksuta)
€ 6,59
€ 0,066 tk (rullis 100) (koos käibemaksuga)
Standard
100
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
100 - 100 | € 0,054 | € 5,40 |
200 - 400 | € 0,052 | € 5,20 |
500 - 900 | € 0,034 | € 3,40 |
1000 - 1900 | € 0,032 | € 3,20 |
2000+ | € 0,027 | € 2,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Päritoluriik
China
Toote üksikasjad