Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
P.O.A.
tk (pakis 25) (ilma käibemaksuta)
Standard
25
P.O.A.
tk (pakis 25) (ilma käibemaksuta)
Lao andmed ajutiselt ei ole saadaval.
Standard
25
Lao andmed ajutiselt ei ole saadaval.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm