Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
800 mA
Maximum Drain Source Voltage
150 V
Package Type
SOT-23
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.92mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Height
0.94mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 19,75
€ 0,79 tk (pakis 25) (ilma käibemaksuta)
€ 24,09
€ 0,964 tk (pakis 25) (koos käibemaksuga)
Standard
25
€ 19,75
€ 0,79 tk (pakis 25) (ilma käibemaksuta)
€ 24,09
€ 0,964 tk (pakis 25) (koos käibemaksuga)
Standard
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 75 | € 0,79 | € 19,75 |
100 - 225 | € 0,68 | € 17,00 |
250+ | € 0,59 | € 14,75 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
800 mA
Maximum Drain Source Voltage
150 V
Package Type
SOT-23
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.92mm
Typical Gate Charge @ Vgs
2.9 nC @ 10 V
Height
0.94mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.