onsemi N-Channel MOSFET, 533 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CTXG

RS tootekood: 186-1348PBränd: onsemiTootja Part nr.: NTMTS0D6N04CTXG
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

533 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

480 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

245 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

187 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

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Lao andmed ajutiselt ei ole saadaval.

€ 84,00

tk (rullis) (ilma käibemaksuta)

€ 104,16

tk (rullis) (koos käibemaksuga)

onsemi N-Channel MOSFET, 533 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CTXG
Valige pakendi tüüp

€ 84,00

tk (rullis) (ilma käibemaksuta)

€ 104,16

tk (rullis) (koos käibemaksuga)

onsemi N-Channel MOSFET, 533 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CTXG
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

533 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

480 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

245 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

187 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more