Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Toote üksikasjad
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 107,50
€ 2,15 tk (rullis) (ilma käibemaksuta)
€ 131,15
€ 2,623 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 107,50
€ 2,15 tk (rullis) (ilma käibemaksuta)
€ 131,15
€ 2,623 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
50 - 95 | € 2,15 | € 10,75 |
100 - 495 | € 1,85 | € 9,25 |
500 - 995 | € 1,65 | € 8,25 |
1000+ | € 1,50 | € 7,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Toote üksikasjad