ROHM RAF040P01 P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL

RS tootekood: 124-6767PBränd: ROHMTootja Part nr.: RAF040P01TCL
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

12 V

Series

RAF040P01

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

68 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

800 mW

Maximum Gate Source Voltage

-8 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.1mm

Typical Gate Charge @ Vgs

37 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.82mm

Toote üksikasjad

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 29,20

€ 0,292 tk (rullis) (ilma käibemaksuta)

€ 35,62

€ 0,356 tk (rullis) (koos käibemaksuga)

ROHM RAF040P01 P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL
Valige pakendi tüüp

€ 29,20

€ 0,292 tk (rullis) (ilma käibemaksuta)

€ 35,62

€ 0,356 tk (rullis) (koos käibemaksuga)

ROHM RAF040P01 P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
100 - 180€ 0,292€ 5,84
200 - 480€ 0,251€ 5,02
500 - 980€ 0,234€ 4,68
1000+€ 0,23€ 4,60

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

12 V

Series

RAF040P01

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

68 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

800 mW

Maximum Gate Source Voltage

-8 V

Number of Elements per Chip

1

Width

1.8mm

Length

2.1mm

Typical Gate Charge @ Vgs

37 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.82mm

Toote üksikasjad

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more