Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
€ 73,50
€ 2,45 tk (torus 30) (ilma käibemaksuta)
€ 91,14
€ 3,038 tk (torus 30) (koos käibemaksuga)
30
€ 73,50
€ 2,45 tk (torus 30) (ilma käibemaksuta)
€ 91,14
€ 3,038 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
30 - 60 | € 2,45 | € 73,50 |
90 - 480 | € 2,25 | € 67,50 |
510 - 960 | € 2,20 | € 66,00 |
990+ | € 2,15 | € 64,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.75 x 5.15 x 20.15mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.