Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 4,00
€ 2,00 tk (pakis 2) (ilma käibemaksuta)
€ 4,96
€ 2,48 tk (pakis 2) (koos käibemaksuga)
Standard
2
€ 4,00
€ 2,00 tk (pakis 2) (ilma käibemaksuta)
€ 4,96
€ 2,48 tk (pakis 2) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
2
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 2 - 2 | € 2,00 | € 4,00 |
| 4+ | € 1,90 | € 3,80 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad


