Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 26,50
€ 2,65 tk (torus) (ilma käibemaksuta)
€ 32,86
€ 3,29 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 26,50
€ 2,65 tk (torus) (ilma käibemaksuta)
€ 32,86
€ 3,29 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind |
---|---|
10 - 99 | € 2,65 |
100 - 499 | € 2,05 |
500 - 999 | € 1,75 |
1000+ | € 1,45 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.