Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Päritoluriik
Philippines
Toote üksikasjad
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 44,40
€ 0,888 tk (torus 50) (ilma käibemaksuta)
€ 54,17
€ 1,083 tk (torus 50) (koos käibemaksuga)
50
€ 44,40
€ 0,888 tk (torus 50) (ilma käibemaksuta)
€ 54,17
€ 1,083 tk (torus 50) (koos käibemaksuga)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
50 - 50 | € 0,888 | € 44,40 |
100 - 200 | € 0,799 | € 39,95 |
250 - 450 | € 0,755 | € 37,75 |
500 - 700 | € 0,723 | € 36,15 |
750+ | € 0,706 | € 35,30 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Päritoluriik
Philippines
Toote üksikasjad