Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T

RS tootekood: 133-0156PBränd: Texas InstrumentsTootja Part nr.: CSD25404Q3T
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Lao andmed ajutiselt ei ole saadaval.

€ 3,26

€ 0,652 tk (rullis) (ilma käibemaksuta)

€ 3,98

€ 0,795 tk (rullis) (koos käibemaksuga)

Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Valige pakendi tüüp

€ 3,26

€ 0,652 tk (rullis) (ilma käibemaksuta)

€ 3,98

€ 0,795 tk (rullis) (koos käibemaksuga)

Texas Instruments P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more