Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU

RS tootekood: 171-2410Bränd: ToshibaTootja Part nr.: SSM6N7002KFU
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Päritoluriik

Thailand

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Lao andmed ajutiselt ei ole saadaval.

€ 141,00

€ 0,047 tk (rullis 3000) (ilma käibemaksuta)

€ 172,02

€ 0,057 tk (rullis 3000) (koos käibemaksuga)

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU

€ 141,00

€ 0,047 tk (rullis 3000) (ilma käibemaksuta)

€ 172,02

€ 0,057 tk (rullis 3000) (koos käibemaksuga)

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
3000 - 3000€ 0,047€ 141,00
6000 - 6000€ 0,044€ 132,00
9000+€ 0,04€ 120,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.1V

Height

0.9mm

Automotive Standard

AEC-Q101

Päritoluriik

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more