Toshiba TK N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F)
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
500 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.8mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
40.5mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Height
19mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Japan
Toote üksikasjad
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1,35
€ 1,35 tk (ilma käibemaksuta)
€ 1,67
€ 1,67 tk (koos käibemaksuga)
1
€ 1,35
€ 1,35 tk (ilma käibemaksuta)
€ 1,67
€ 1,67 tk (koos käibemaksuga)
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind |
|---|---|
| 1 - 24 | € 1,35 |
| 25+ | € 0,99 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
500 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.8mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
40.5mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Height
19mm
Minimum Operating Temperature
-55 °C
Päritoluriik
Japan
Toote üksikasjad
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products