Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

RS tootekood: 168-7964Bränd: ToshibaTootja Part nr.: TK20J60W,S1VQ(O
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20mm

Päritoluriik

Japan

Toote üksikasjad

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 145,00

€ 5,80 tk (torus 25) (ilma käibemaksuta)

€ 176,90

€ 7,076 tk (torus 25) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

€ 145,00

€ 5,80 tk (torus 25) (ilma käibemaksuta)

€ 176,90

€ 7,076 tk (torus 25) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20mm

Päritoluriik

Japan

Toote üksikasjad

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more