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Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

RS tootekood: 796-5080Bränd: ToshibaTootja Part nr.: TK35E08N1
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15.1mm

Toote üksikasjad

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 6,50

€ 1,30 tk (pakis 5) (ilma käibemaksuta)

€ 7,93

€ 1,586 tk (pakis 5) (koos käibemaksuga)

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1
Valige pakendi tüüp

€ 6,50

€ 1,30 tk (pakis 5) (ilma käibemaksuta)

€ 7,93

€ 1,586 tk (pakis 5) (koos käibemaksuga)

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

72 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Height

15.1mm

Toote üksikasjad

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada