Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Päritoluriik
Japan
Toote üksikasjad
MOSFET Transistors, Toshiba
€ 36,70
€ 0,734 tk (torus 50) (ilma käibemaksuta)
€ 44,77
€ 0,895 tk (torus 50) (koos käibemaksuga)
50
€ 36,70
€ 0,734 tk (torus 50) (ilma käibemaksuta)
€ 44,77
€ 0,895 tk (torus 50) (koos käibemaksuga)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Päritoluriik
Japan
Toote üksikasjad