Toshiba TK N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S

RS tootekood: 168-7989Bränd: ToshibaTootja Part nr.: TK62N60W,S1VF(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

15.94mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Number of Elements per Chip

1

Width

5.02mm

Height

20.95mm

Päritoluriik

China

Toote üksikasjad

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 348,00

€ 11,60 tk (torus 30) (ilma käibemaksuta)

€ 424,56

€ 14,152 tk (torus 30) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S

€ 348,00

€ 11,60 tk (torus 30) (ilma käibemaksuta)

€ 424,56

€ 14,152 tk (torus 30) (koos käibemaksuga)

Toshiba TK N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Tuub
30 - 120€ 11,60€ 348,00
150 - 270€ 10,50€ 315,00
300+€ 9,80€ 294,00

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

400 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

15.94mm

Typical Gate Charge @ Vgs

180 nC @ 10 V

Number of Elements per Chip

1

Width

5.02mm

Height

20.95mm

Päritoluriik

China

Toote üksikasjad

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more