Toshiba TK N-Channel MOSFET, 7 A, 600 V, 3-Pin DPAK TK7P60W,RVQ(S
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
TK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Height
2.3mm
Päritoluriik
China
Toote üksikasjad
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,20
€ 1,40 tk (pakis 8) (ilma käibemaksuta)
€ 13,89
€ 1,736 tk (pakis 8) (koos käibemaksuga)
Standard
8
€ 11,20
€ 1,40 tk (pakis 8) (ilma käibemaksuta)
€ 13,89
€ 1,736 tk (pakis 8) (koos käibemaksuga)
Standard
8
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 8 - 72 | € 1,40 | € 11,20 |
| 80 - 152 | € 1,20 | € 9,60 |
| 160 - 392 | € 1,15 | € 9,20 |
| 400 - 792 | € 1,10 | € 8,80 |
| 800+ | € 1,10 | € 8,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
TK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Height
2.3mm
Päritoluriik
China
Toote üksikasjad
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products