Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S

RS tootekood: 133-2815Bränd: ToshibaTootja Part nr.: TPN3300ANH,LQ(S
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

100 V

Package Type

TSON

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Forward Diode Voltage

1.2V

Height

0.85mm

Päritoluriik

Japan

Toote üksikasjad

MOSFET Transistors, Toshiba

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Lao andmed ajutiselt ei ole saadaval.

€ 9,12

€ 0,456 tk (pakis 20) (ilma käibemaksuta)

€ 11,31

€ 0,565 tk (pakis 20) (koos käibemaksuga)

Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S

€ 9,12

€ 0,456 tk (pakis 20) (ilma käibemaksuta)

€ 11,31

€ 0,565 tk (pakis 20) (koos käibemaksuga)

Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

100 V

Package Type

TSON

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Forward Diode Voltage

1.2V

Height

0.85mm

Päritoluriik

Japan

Toote üksikasjad

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more