Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3

RS tootekood: 178-3853Bränd: Vishay SiliconixTootja Part nr.: Si2319DDS-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

China

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Lao andmed ajutiselt ei ole saadaval.

€ 22,35

€ 0,447 tk (pakis 50) (ilma käibemaksuta)

€ 27,71

€ 0,554 tk (pakis 50) (koos käibemaksuga)

Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3
Valige pakendi tüüp

€ 22,35

€ 0,447 tk (pakis 50) (ilma käibemaksuta)

€ 27,71

€ 0,554 tk (pakis 50) (koos käibemaksuga)

Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
50 - 50€ 0,447€ 22,35
100 - 450€ 0,379€ 18,95
500 - 950€ 0,335€ 16,75
1000+€ 0,29€ 14,50

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more