Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
China
€ 22,35
€ 0,447 tk (pakis 50) (ilma käibemaksuta)
€ 27,71
€ 0,554 tk (pakis 50) (koos käibemaksuga)
Standard
50
€ 22,35
€ 0,447 tk (pakis 50) (ilma käibemaksuta)
€ 27,71
€ 0,554 tk (pakis 50) (koos käibemaksuga)
Standard
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
50 - 50 | € 0,447 | € 22,35 |
100 - 450 | € 0,379 | € 18,95 |
500 - 950 | € 0,335 | € 16,75 |
1000+ | € 0,29 | € 14,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
China