Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3

RS tootekood: 178-3670Bränd: Vishay SiliconixTootja Part nr.: SiDR392DP-T1-GE3
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

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Lao andmed ajutiselt ei ole saadaval.

€ 4 050,00

€ 1,35 tk (rullis 3000) (ilma käibemaksuta)

€ 4 941,00

€ 1,647 tk (rullis 3000) (koos käibemaksuga)

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3

€ 4 050,00

€ 1,35 tk (rullis 3000) (ilma käibemaksuta)

€ 4 941,00

€ 1,647 tk (rullis 3000) (koos käibemaksuga)

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more