Vishay N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP IRFI820GPBF

RS tootekood: 145-1790Bränd: VishayTootja Part nr.: IRFI820GPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.8mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 24,95

€ 0,499 tk (torus 50) (ilma käibemaksuta)

€ 30,44

€ 0,609 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP IRFI820GPBF

€ 24,95

€ 0,499 tk (torus 50) (ilma käibemaksuta)

€ 30,44

€ 0,609 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP IRFI820GPBF
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

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Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

24 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.8mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada