Vishay N-Channel MOSFET, 5.5 A, 600 V, 3-Pin TO-220FP IRFIB6N60APBF

RS tootekood: 541-1950Bränd: VishayTootja Part nr.: IRFIB6N60APBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 3,90

€ 3,90 tk (ilma käibemaksuta)

€ 4,76

€ 4,76 tk (koos käibemaksuga)

Vishay N-Channel MOSFET, 5.5 A, 600 V, 3-Pin TO-220FP IRFIB6N60APBF
Valige pakendi tüüp

€ 3,90

€ 3,90 tk (ilma käibemaksuta)

€ 4,76

€ 4,76 tk (koos käibemaksuga)

Vishay N-Channel MOSFET, 5.5 A, 600 V, 3-Pin TO-220FP IRFIB6N60APBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

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kogusÜhikuhind
1 - 9€ 3,90
10 - 49€ 3,30
50 - 99€ 3,10
100 - 249€ 2,85
250+€ 2,45

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JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada