Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 40,50
€ 4,05 tk (torus) (ilma käibemaksuta)
€ 49,41
€ 4,941 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
€ 40,50
€ 4,05 tk (torus) (ilma käibemaksuta)
€ 49,41
€ 4,941 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
10 - 20 | € 4,05 | € 20,25 |
25 - 45 | € 3,75 | € 18,75 |
50 - 120 | € 3,50 | € 17,50 |
125+ | € 3,05 | € 15,25 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Width
5.31mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad