Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 3,26
€ 0,163 tk (lindis) (ilma käibemaksuta)
€ 3,98
€ 0,199 tk (lindis) (koos käibemaksuga)
Standard
20
€ 3,26
€ 0,163 tk (lindis) (ilma käibemaksuta)
€ 3,98
€ 0,199 tk (lindis) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Lint |
---|---|---|
20 - 180 | € 0,163 | € 3,26 |
200 - 480 | € 0,114 | € 2,28 |
500 - 980 | € 0,102 | € 2,04 |
1000 - 1980 | € 0,088 | € 1,76 |
2000+ | € 0,087 | € 1,74 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad