Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 19,80
€ 0,099 tk (rullis) (ilma käibemaksuta)
€ 24,55
€ 0,123 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
€ 19,80
€ 0,099 tk (rullis) (ilma käibemaksuta)
€ 24,55
€ 0,123 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
200 - 480 | € 0,099 | € 1,98 |
500 - 980 | € 0,088 | € 1,76 |
1000 - 1980 | € 0,077 | € 1,54 |
2000+ | € 0,076 | € 1,52 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad