Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3

RS tootekood: 787-9005PBränd: VishayTootja Part nr.: SI1012CR-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

240 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

1.3 nC @ 8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

1.68mm

Width

0.86mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Toote üksikasjad

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 27,20

€ 0,136 tk (rullis) (ilma käibemaksuta)

€ 33,18

€ 0,166 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
Valige pakendi tüüp

€ 27,20

€ 0,136 tk (rullis) (ilma käibemaksuta)

€ 33,18

€ 0,166 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 SI1012CR-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Rull
200 - 480€ 0,136€ 2,72
500 - 980€ 0,122€ 2,44
1000 - 1980€ 0,086€ 1,72
2000+€ 0,084€ 1,68

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

630 mA

Maximum Drain Source Voltage

20 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

240 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Typical Gate Charge @ Vgs

1.3 nC @ 8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

1.68mm

Width

0.86mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Toote üksikasjad

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more