Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V, 4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 645,00
€ 0,215 tk (rullis 3000) (ilma käibemaksuta)
€ 786,90
€ 0,262 tk (rullis 3000) (koos käibemaksuga)
3000
€ 645,00
€ 0,215 tk (rullis 3000) (ilma käibemaksuta)
€ 786,90
€ 0,262 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V, 4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Päritoluriik
China
Toote üksikasjad