Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3

RS tootekood: 812-3117PBränd: VishayTootja Part nr.: SI2304DDS-T1-GE3
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

1.4mm

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.02mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Lao andmed ajutiselt ei ole saadaval.

€ 96,00

€ 0,192 tk (rullis) (ilma käibemaksuta)

€ 119,04

€ 0,238 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
Valige pakendi tüüp

€ 96,00

€ 0,192 tk (rullis) (ilma käibemaksuta)

€ 119,04

€ 0,238 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 3.6 A, 30 V, 3-Pin SOT-23 SI2304DDS-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
500 - 1200€ 0,192€ 9,60
1250 - 2450€ 0,151€ 7,55
2500 - 4950€ 0,138€ 6,90
5000+€ 0,123€ 6,15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

1.4mm

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.02mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada