P-Channel MOSFET Transistor, 6 A, 20 V, 3-Pin SOT-23 Vishay SI2323CDS-T1-GE3

RS tootekood: 787-8992PBränd: VishayTootja Part nr.: SI2323CDS-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

16 nC @ 4.5 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

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Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
€ 0,551tk (pakis 20) (ilma käibemaksuta)
Lao andmed ajutiselt ei ole saadaval.

P.O.A.

tk (rullis) (ilma käibemaksuta)

P-Channel MOSFET Transistor, 6 A, 20 V, 3-Pin SOT-23 Vishay SI2323CDS-T1-GE3
Valige pakendi tüüp

P.O.A.

tk (rullis) (ilma käibemaksuta)

P-Channel MOSFET Transistor, 6 A, 20 V, 3-Pin SOT-23 Vishay SI2323CDS-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Teid võib huvitada
Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
€ 0,551tk (pakis 20) (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

16 nC @ 4.5 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Vishay P-Channel MOSFET, 4.3 A, 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
€ 0,551tk (pakis 20) (ilma käibemaksuta)