Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3

RS tootekood: 787-9229PBränd: VishayTootja Part nr.: SI2328DS-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Width

1.4mm

Typical Gate Charge @ Vgs

1.45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 67,50

€ 0,675 tk (rullis) (ilma käibemaksuta)

€ 83,70

€ 0,837 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3
Valige pakendi tüüp

€ 67,50

€ 0,675 tk (rullis) (ilma käibemaksuta)

€ 83,70

€ 0,837 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-GE3

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Rull
100 - 240€ 0,675€ 6,75
250 - 490€ 0,605€ 6,05
500 - 990€ 0,391€ 3,91
1000+€ 0,341€ 3,41

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Width

1.4mm

Typical Gate Charge @ Vgs

1.45 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more