Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
1.45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 67,50
€ 0,675 tk (rullis) (ilma käibemaksuta)
€ 83,70
€ 0,837 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 67,50
€ 0,675 tk (rullis) (ilma käibemaksuta)
€ 83,70
€ 0,837 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Rull |
---|---|---|
100 - 240 | € 0,675 | € 6,75 |
250 - 490 | € 0,605 | € 6,05 |
500 - 990 | € 0,391 | € 3,91 |
1000+ | € 0,341 | € 3,41 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Width
1.4mm
Typical Gate Charge @ Vgs
1.45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad