Vishay TrenchFET P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 SI3477DV-T1-GE3

RS tootekood: 812-3160PBränd: VishayTootja Part nr.: SI3477DV-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Series

TrenchFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 102,40

tk (rullis) (ilma käibemaksuta)

€ 126,98

tk (rullis) (koos käibemaksuga)

Vishay TrenchFET P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 SI3477DV-T1-GE3
Valige pakendi tüüp

€ 102,40

tk (rullis) (ilma käibemaksuta)

€ 126,98

tk (rullis) (koos käibemaksuga)

Vishay TrenchFET P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 SI3477DV-T1-GE3

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Series

TrenchFET

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more