Vishay N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC SI4190ADY-T1-GE3

RS tootekood: 787-9235Bränd: VishayTootja Part nr.: SI4190ADY-T1-GE3
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Lao andmed ajutiselt ei ole saadaval.

€ 9,25

€ 1,85 tk (pakis 5) (ilma käibemaksuta)

€ 11,47

€ 2,294 tk (pakis 5) (koos käibemaksuga)

Vishay N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC SI4190ADY-T1-GE3
Valige pakendi tüüp

€ 9,25

€ 1,85 tk (pakis 5) (ilma käibemaksuta)

€ 11,47

€ 2,294 tk (pakis 5) (koos käibemaksuga)

Vishay N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC SI4190ADY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4mm

Transistor Material

Si

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more