Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 9,25
€ 1,85 tk (pakis 5) (ilma käibemaksuta)
€ 11,47
€ 2,294 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 9,25
€ 1,85 tk (pakis 5) (ilma käibemaksuta)
€ 11,47
€ 2,294 tk (pakis 5) (koos käibemaksuga)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
100 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
44.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad