Dual N/P-Channel MOSFET Transistor, 3.8 A, 6.6 A, 20 V, 8-Pin SOIC Vishay SI4500BDY-T1-E3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.8 A, 6.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ, 60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
11 nC @ 4.5 V, 6 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Päritoluriik
China
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P.O.A.
tk (pakis 5) (ilma käibemaksuta)
Standard
5
P.O.A.
tk (pakis 5) (ilma käibemaksuta)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
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Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.8 A, 6.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ, 60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
11 nC @ 4.5 V, 6 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products