Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.7 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
53 mΩ, 80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V, 8 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Toote üksikasjad
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 6,18
€ 0,618 tk (pakis 10) (ilma käibemaksuta)
€ 7,66
€ 0,766 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 6,18
€ 0,618 tk (pakis 10) (ilma käibemaksuta)
€ 7,66
€ 0,766 tk (pakis 10) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
10
Lao andmed ajutiselt ei ole saadaval.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 10 - 40 | € 0,618 | € 6,18 |
| 50 - 90 | € 0,606 | € 6,06 |
| 100 - 240 | € 0,474 | € 4,74 |
| 250 - 490 | € 0,46 | € 4,60 |
| 500+ | € 0,392 | € 3,92 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.7 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
53 mΩ, 80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V, 8 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Toote üksikasjad
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products