Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 55,00
€ 1,10 tk (rullis) (ilma käibemaksuta)
€ 68,20
€ 1,364 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 55,00
€ 1,10 tk (rullis) (ilma käibemaksuta)
€ 68,20
€ 1,364 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
50 - 245 | € 1,10 | € 5,50 |
250 - 495 | € 0,891 | € 4,46 |
500 - 1245 | € 0,74 | € 3,70 |
1250+ | € 0,678 | € 3,39 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad