Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11,50
€ 1,15 tk (pakis 10) (ilma käibemaksuta)
€ 14,03
€ 1,403 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 11,50
€ 1,15 tk (pakis 10) (ilma käibemaksuta)
€ 14,03
€ 1,403 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 1,15 | € 11,50 |
100 - 240 | € 0,907 | € 9,07 |
250 - 490 | € 0,703 | € 7,03 |
500 - 990 | € 0,623 | € 6,23 |
1000+ | € 0,534 | € 5,34 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-50 °C
Päritoluriik
China
Toote üksikasjad