Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

RS tootekood: 818-1380Bränd: VishayTootja Part nr.: SI7121DN-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 11,50

€ 1,15 tk (pakis 10) (ilma käibemaksuta)

€ 14,03

€ 1,403 tk (pakis 10) (koos käibemaksuga)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Valige pakendi tüüp

€ 11,50

€ 1,15 tk (pakis 10) (ilma käibemaksuta)

€ 14,03

€ 1,403 tk (pakis 10) (koos käibemaksuga)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
10 - 90€ 1,15€ 11,50
100 - 240€ 0,907€ 9,07
250 - 490€ 0,703€ 7,03
500 - 990€ 0,623€ 6,23
1000+€ 0,534€ 5,34

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more