Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3

RS tootekood: 818-1384PBränd: VishayTootja Part nr.: SI7129DN-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.15mm

Typical Gate Charge @ Vgs

47.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.07mm

Minimum Operating Temperature

-50 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 65,00

€ 0,65 tk (rullis) (ilma käibemaksuta)

€ 80,60

€ 0,806 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
Valige pakendi tüüp

€ 65,00

€ 0,65 tk (rullis) (ilma käibemaksuta)

€ 80,60

€ 0,806 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
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kogusÜhikuhindPer Rull
100 - 180€ 0,65€ 13,00
200 - 480€ 0,622€ 12,44
500 - 980€ 0,553€ 11,06
1000+€ 0,518€ 10,36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.15mm

Typical Gate Charge @ Vgs

47.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.07mm

Minimum Operating Temperature

-50 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more