Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 46,80
€ 0,234 tk (rullis) (ilma käibemaksuta)
€ 58,03
€ 0,29 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
€ 46,80
€ 0,234 tk (rullis) (ilma käibemaksuta)
€ 58,03
€ 0,29 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
200 - 980 | € 0,234 | € 4,68 |
1000 - 1980 | € 0,212 | € 4,24 |
2000 - 4980 | € 0,199 | € 3,98 |
5000+ | € 0,187 | € 3,74 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
20 V
Package Type
MICRO FOOT
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1mm
Typical Gate Charge @ Vgs
17.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.268mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad