Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

RS tootekood: 818-1438PBränd: VishayTootja Part nr.: SI8489EDB-T2-E1
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

MICRO FOOT

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1mm

Typical Gate Charge @ Vgs

17.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.268mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 47,80

€ 0,239 tk (rullis) (ilma käibemaksuta)

€ 59,27

€ 0,296 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1
Valige pakendi tüüp

€ 47,80

€ 0,239 tk (rullis) (ilma käibemaksuta)

€ 59,27

€ 0,296 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 4.3 A, 20 V, 4-Pin MICRO FOOT SI8489EDB-T2-E1

Lao andmed ajutiselt ei ole saadaval.

Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

kogusÜhikuhindPer Rull
200 - 980€ 0,239€ 4,78
1000 - 1980€ 0,217€ 4,34
2000 - 4980€ 0,203€ 4,06
5000+€ 0,191€ 3,82

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

20 V

Package Type

MICRO FOOT

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1mm

Typical Gate Charge @ Vgs

17.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.268mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more