Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3

RS tootekood: 818-1444PBränd: VishayTootja Part nr.: SI9407BDY-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

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P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 86,90

€ 0,869 tk (rullis) (ilma käibemaksuta)

€ 107,76

€ 1,078 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3
Valige pakendi tüüp

€ 86,90

€ 0,869 tk (rullis) (ilma käibemaksuta)

€ 107,76

€ 1,078 tk (rullis) (koos käibemaksuga)

Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
100 - 180€ 0,869€ 17,38
200 - 480€ 0,802€ 16,04
500 - 980€ 0,63€ 12,60
1000+€ 0,595€ 11,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more