Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 34,20
tk (rullis) (ilma käibemaksuta)
€ 42,41
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 34,20
tk (rullis) (ilma käibemaksuta)
€ 42,41
tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad