Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC SIHG20N50C-E3

RS tootekood: 145-2031Bränd: VishayTootja Part nr.: SIHG20N50C-E3
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.82mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 105,00

€ 2,10 tk (torus 50) (ilma käibemaksuta)

€ 130,20

€ 2,604 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC SIHG20N50C-E3

€ 105,00

€ 2,10 tk (torus 50) (ilma käibemaksuta)

€ 130,20

€ 2,604 tk (torus 50) (koos käibemaksuga)

Vishay N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC SIHG20N50C-E3
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.82mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more