Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 105,60
€ 0,528 tk (rullis) (ilma käibemaksuta)
€ 128,83
€ 0,644 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
€ 105,60
€ 0,528 tk (rullis) (ilma käibemaksuta)
€ 128,83
€ 0,644 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 200 - 480 | € 0,528 | € 10,56 |
| 500 - 980 | € 0,467 | € 9,34 |
| 1000 - 1980 | € 0,402 | € 8,04 |
| 2000+ | € 0,335 | € 6,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products