Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 25,50
€ 2,55 tk (pakis 10) (ilma käibemaksuta)
€ 31,11
€ 3,111 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 25,50
€ 2,55 tk (pakis 10) (ilma käibemaksuta)
€ 31,11
€ 3,111 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 40 | € 2,55 | € 25,50 |
50 - 90 | € 2,05 | € 20,50 |
100 - 240 | € 1,80 | € 18,00 |
250 - 490 | € 1,65 | € 16,50 |
500+ | € 1,40 | € 14,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad