Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK SQD40N06-14L_GE3

RS tootekood: 787-9484Bränd: VishayTootja Part nr.: SQD40N06-14L_GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

SQ Rugged

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Toote üksikasjad

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor

The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Approvals

AEC-Q101

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 10,75

€ 2,15 tk (pakis 5) (ilma käibemaksuta)

€ 13,11

€ 2,623 tk (pakis 5) (koos käibemaksuga)

Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK SQD40N06-14L_GE3
Valige pakendi tüüp

€ 10,75

€ 2,15 tk (pakis 5) (ilma käibemaksuta)

€ 13,11

€ 2,623 tk (pakis 5) (koos käibemaksuga)

Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V, 3-Pin DPAK SQD40N06-14L_GE3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
5 - 45€ 2,15€ 10,75
50 - 120€ 1,95€ 9,75
125 - 245€ 1,80€ 9,00
250 - 495€ 1,70€ 8,50
500+€ 1,60€ 8,00

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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

SQ Rugged

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Toote üksikasjad

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor

The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Approvals

AEC-Q101

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more