Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3

RS tootekood: 708-5014Bränd: VishayTootja Part nr.: SUP57N20-33-E3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

90 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 22,25

€ 4,45 tk (pakis 5) (ilma käibemaksuta)

€ 27,15

€ 5,429 tk (pakis 5) (koos käibemaksuga)

Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3
Valige pakendi tüüp

€ 22,25

€ 4,45 tk (pakis 5) (ilma käibemaksuta)

€ 27,15

€ 5,429 tk (pakis 5) (koos käibemaksuga)

Vishay N-Channel MOSFET, 57 A, 200 V, 3-Pin TO-220AB SUP57N20-33-E3
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Pakend
5 - 20€ 4,45€ 22,25
25 - 45€ 3,85€ 19,25
50 - 120€ 3,30€ 16,50
125 - 245€ 3,15€ 15,75
250+€ 2,70€ 13,50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

90 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more